Photoluminescence: Inorganic Double Helices in Semiconducting SnIP (Adv. Mater. 44/2016). Issue 44 (17th November 2016)

• Record Type: Journal Article
• Authors: Pfister, Daniela; Schäfer, Konrad; Ott, Claudia; Gerke, Birgit; Pöttgen, Rainer; Janka, Oliver; Baumgartner, Maximilian; Efimova, Anastasia; Hohmann, Andrea; Schmidt, Peer; Venkatachalam, Sabarinathan; van Wüllen, Leo; Schürmann, Ulrich; Kienle, Lorenz; Duppel, Viola; Parzinger, Eric; Miller, Bastian; Becker, Jonathan; Holleitner, Alexander; Weihrich, Richard; Nilges, Tom
• Is Part Of: Advanced materials. Volume 28:Issue 44(2016)
• Page Start: 9782
• Page End: 9782
• Publication Date: 2016-11-17
• Subjects: double helices -- nanorods -- photoluminescence -- quantum‐confinement -- semiconductor; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201670310
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : SnIP, a 1.8 eV semiconductor, adopts one on the most prominent structures, a double helix, as shown on page 9783 by T. Nilges and co‐workers. The compound is the first ever made atomic‐scale inorganic double helix, featuring high mechanical flexibility, photoluminescence and thermal stability. As‐prepared crystals of SnIP can be mechanically and chemically delaminated to 5 nm rods within minutes.