Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces. Issue 1 (14th January 2016)

• Record Type: Journal Article
• Authors: Losego, Mark D.; Paisley, Elizabeth A.; Craft, H. Spalding; Lam, Peter G.; Sachet, Edward; Mita, Seiji; Collazo, Ramon; Sitar, Zlatko; Maria, Jon-Paul
• Is Part Of: Journal of materials research. Volume 31:Issue 1(2016)
• Page Start: 36
• Page End: 45
• Publication Date: 2016-01-14
• Subjects: molecular beam epitaxy, -- film, -- surface chemistry; Materials -- Research -- Periodicals; 620.1105
• DOI: 10.1557/jmr.2015.332
• Languages: English
• ISSNs: 0884-2914

Abstract

Abstract: Abstract : Selective area growth of thin films reduces the number of steps in microfabrication processing and enables novel device structures. Here, we report, for the first time, selective area epitaxy of an oxide material on a GaN surface. Chlorination of the GaN surface via wet chemical processing is found effective to disrupt Mg adsorption and selectively prevent molecular beam epitaxy growth of MgO. MgO films grown on neighboring, nonchlorinated surfaces are epitaxial with a (111) MgO||(0001) GaN crystallographic relationship. Better than 3 μm lateral resolution for the selective area growth of MgO on GaN is demonstrated.