Charge Injection: Asymmetric Split‐Gate Ambipolar Transistor and Its Circuit Application to Complementary Inverter (Adv. Mater. Technol. 4/2016). Issue 4 (July 2016)

• Record Type: Journal Article
• Authors: Yoo, Hocheon; Smits, Edsger C. P.; van Breemen, Albert J. J. M.; van der Steen, Jan‐Laurens P. J.; Torricelli, Fabrizio; Ghittorelli, Matteo; Lee, Jiyoul; Gelinck, Gerwin H.; Kim, Jae‐Joon
• Is Part Of: Advanced materials technologies. Volume 1:Issue 4(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-07
• Subjects: charge injection -- complementary organic transistor -- organic ambipolar semiconductor -- organic CMOS inverter -- split‐gate transistor; Materials science -- Periodicals; Technological innovations -- Periodicals; Materials science; Technological innovations; Periodicals; 620.1105
• DOI: 10.1002/admt.201670017
• Languages: English
• ISSNs: 2365-709X

Abstract

Abstract : In article number 1600044, Jiyoul Lee, Gerwin H. Gelinck, Jae‐Joon Kim, and co‐workers present a novel ambipolar split‐gate thin‐film transistor (TFT). Depending on the bias voltage at the side‐gate, an ambipolar TFT can operate as an either p‐type or n‐type device selectively. A complementary inverter based on ambipolar split‐gate TFTs is demonstrated, which shows the higher noise margin and DC‐gain.