Asymmetric Split‐Gate Ambipolar Transistor and Its Circuit Application to Complementary Inverter. Issue 4 (17th May 2016)

• Record Type: Journal Article
• Authors: Yoo, Hocheon; Smits, Edsger C. P.; van Breemen, Albert J. J. M.; van der Steen, Jan‐Laurens P. J.; Torricelli, Fabrizio; Ghittorelli, Matteo; Lee, Jiyoul; Gelinck, Gerwin H.; Kim, Jae‐Joon
• Is Part Of: Advanced materials technologies. Volume 1:Issue 4(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-05-17
• Subjects: charge injection -- complementary organic transistor -- organic ambipolar semiconductor -- organic CMOS inverter -- split‐gate transistor; Materials science -- Periodicals; Technological innovations -- Periodicals; Materials science; Technological innovations; Periodicals; 620.1105
• DOI: 10.1002/admt.201600044
• Languages: English
• ISSNs: 2365-709X

Abstract

Abstract : Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p‐type and n‐type) in a thin‐film transistor with a high‐performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain.