Zinc and linkage effects of novel porphyrin-containing polyimides on resistor memory behaviors. Issue 91 (16th September 2016)

• Record Type: Journal Article
• Authors: Tsai, Chia-Liang; Sudhir K Reddy, Kamani; Yeh, Chen-Yu; Wang, Chin-Li; Lin, Ching-Yao; Yen, Hung-Ju; Tsai, Ming-Chi; Liou, Guey-Sheng
• Is Part Of: RSC advances. Volume 6:Issue 91(2016)
• Page Start: 88531
• Page End: 88537
• Publication Date: 2016-09-16
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra18986e
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : The retention time of resistor type memory devices could be tuned by the linkage groups between porphyrin moiety and DSDA on the PIs. Moreover, the metal zinc also plays an important role in further tuning the memory behavior. Abstract : A new class of porphyrin-containing polyimides, ZnPor- s -DSDA, ZnPor- t -DSDA, Por- s -DSDA andPor- t -DSDA, were synthesized from porphyrin-containing diamines and 3, 3′, 4, 4′-diphenylsulfone tetracarboxylic dianhydride for resistor-type memory applications. The effect of the linkage and zinc metal was investigated by electrochemistry, molecular simulations, and memory behaviors. The memory devices with different retention times derived from polymersZnPor- s -DSDA (WORM, >3 h) andZnPor- t -DSDA (DRAM, 30 s) demonstrated the importance of the linkage effect, and the insulation property of polyimidesPor- s -DSDA andPor- t -DSDA also implies a crucial memory behavior by metal chelation.