Atomic layer deposition of ZnO/TiO2 multilayers: towards the understanding of Ti-doping in ZnO thin films. Issue 91 (16th September 2016)

• Record Type: Journal Article
• Authors: Torrisi, G.; Di Mauro, A.; Scuderi, M.; Nicotra, G.; Impellizzeri, G.
• Is Part Of: RSC advances. Volume 6:Issue 91(2016)
• Page Start: 88886
• Page End: 88895
• Publication Date: 2016-09-16
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra13773c
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Undoped and Ti-doped ZnO (TZO) films were deposited by atomic layer deposition (ALD). Abstract : Undoped and Ti-doped ZnO (TZO) films were deposited by atomic layer deposition (ALD). Titanium was introduced by alternating consecutive ZnO cycles between each TiO2 single layer (Ti nominal concentration of 2%). The electrical, optical, morphological, and structural properties of the films (less than 80 nm thick) were tested as a function of the deposition temperature (from 120 to 240 °C). The TZO films deposited at 200 °C showed the lowest resistivity: 3.0 × 10 −3 Ω cm. All the resulting TZO films were highly transparent, with an absorbance in the visible range of less than 3%. Thanks to an accurate investigation through transmission electron microscopy we ruled out the well-assessed explanation of an extrinsic doping mechanism of transparent conductive oxide (TCO), suggesting an alternative mechanism. These results demonstrate that the ALD is a promising technique to grow thin TZO films with remarkable electrical and optical properties.