Single Electron Gating of Topological Insulators. Issue 45 (28th September 2016)

• Record Type: Journal Article
• Authors: Sessi, Paolo; Bathon, Thomas; Kokh, Konstantin Aleksandrovich; Tereshchenko, Oleg Evgenievich; Bode, Matthias
• Is Part Of: Advanced materials. Volume 28:Issue 45(2016)
• Page Start: 10073
• Page End: 10078
• Publication Date: 2016-09-28
• Subjects: hybrid heterostructures -- ionization -- molecules -- scanning tunneling microscopy -- topological insulators; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201602413
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : The effective gating of topological insulators is demonstrated, through the coupling of molecules to their surface. By using electric fields, they allow for dynamic control of the interface charge state by adding or removing single electrons. This process creates a robust transconductance bistability resembling a single‐electron transistor. These findings make hybrid molecule/topological interfaces functional elements while at the same time pushing miniaturization to its ultimate limit.