Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering. (5th December 2016)

• Record Type: Journal Article
• Authors: Ndione, P.F.; Zakutayev, A.; Kumar, M.; Packard, C.E.; Berry, J.J.; Perkins, J.D.; Ginley, D.S.
• Is Part Of: MRS communications. Volume 6:Number 4(2016:Dec.)
• Page Start: 360
• Page End: 366
• Publication Date: 2016-12-05
• Subjects: Materials -- Periodicals; 620.11
• DOI: 10.1557/mrc.2016.57
• Languages: English
• ISSNs: 2159-6859

Abstract

Abstract: Abstract : Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10–2415 S/cm, 4.6–5.3 eV, 3.20–3.34 eV, 9.0–10.8 GPa, and 111–132 GPa, respectively, depending on the cation composition and the deposition conditions. This study enables control of IZTO performance over a broad range of cation compositions.