Cite
HARVARD Citation
Gougousi, T. (2016). Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces. Progress in crystal growth and characterization of materials. 62 (4), pp. 1-21. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Gougousi, T. (2016). Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces. Progress in crystal growth and characterization of materials. 62 (4), pp. 1-21. [Online].