Sb2S3/SnSe thin film solar cells by thermal evaporation. Issue 1670 (10th September 2014)

• Record Type: Journal Article
• Authors: Escorcia-García, José; Barrios-Salgado, Enue; Nair, M.T.S.; Nair, P.K.
• Editors: Gershon, T.; Scanlon, D.O.; Thompson, K.; Wei, S-H.; Yan, Y.; Zakutayev, A.
• Is Part Of: MRS proceedings. Issue 1670:(2014)
• Publication Date: 2014-09-10
• Subjects: thin film, -- crystalline, -- photovoltaic; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.858
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: We report a stable CdS/Sb2 S3 /SnSe heterojunction thin film solar cell deposited on SnO2 :F (FTO) – coated glass substrates. Thermal evaporation at 10 -5 Torr with substrate temperature of 400 °C was used to deposit Sb2 S3 and SnSe thin films of 450 nm and 160 nm, respectively. Thin film Sb2 S3 has an optical band gap ( E g ) of 1.48 eV and photoconductivity ( σ p ) of 4x10 -7 Ω -1 cm -1 and thin film SnSe has an E g of 1.28 eV and σ p of 2 Ω -1 cm -1 . The chemically deposited CdS thin film heated at 400 °C shows an E g of 2.34 eV and σ p of 0.1 Ω -1 cm -1 . Stabilized solar cell structures with these thin films, FTO/CdS/Sb2 S3 /SnSe/C-Ag, showed open circuit voltage ( V oc ) of 0.60 V, short circuit current density ( J sc ) of 5.51 mA/cm 2 and power conversion efficiency ( η ) of 0.96% with a fill factor FF of 0.29. In the absence of the SnSe layer, J sc decreases to 4.77 mA/cm 2 .