Silver antimony sulfide-selenide for thin film solar cells. Issue 1670 (10th September 2014)

• Record Type: Journal Article
• Authors: Capistrán-Martínez, Jesús; Nair, M.T.S; Nair, P.K.
• Editors: Gershon, T.; Scanlon, D.O.; Thompson, K.; Wei, S-H.; Yan, Y.; Zakutayev, A.
• Is Part Of: MRS proceedings. Issue 1670:(2014)
• Publication Date: 2014-09-10
• Subjects: photovoltaic, -- electrical properties, -- electronic material; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.859
• Languages: English
• ISSNs: 0272-9172

Abstract

Abstract: Thin films of AgSbS2 (150 nm) are prepared (75 min at 40 °C) via chemical deposition using a solution mixture containing SbCl3, Na2 S2 O3 and AgNO3 . As-deposited films are amorphous. When they are heated in nitrogen at 180-320 °C, crystalline cubic-AgSbS2 films are formed. They show an optical band gap 1.89 eV and photoconductivity 1.8x10 -5 Ω -1 cm -1 . Silver antimony sulfide-selenide film, AgSb(Sx Se1-x )2, is produced from the initial amorphous film when it is heated in presence of Se-vapor. XRD analysis confirms the formation of solid solution AgSbS1.25 Se0.75 or AgSbSe2 depending on the extent of Se-vapor available during heating. SnO2 :F/CdS/AgSbS2 /C solar cell shows V oc 610 mV, J sc 0.88 mA/cm 2, FF 0.53 and η 0.28%. In SnO2 :F/CdS/Sb2 S3 /AgSb(Sx Se1-x )2 /C solar cell, V oc is 582 mV, J sc 0.99 mA/cm 2, FF 0.51 and η 0.29%.