Cu2ZnSnSe4 from Chemically Deposited Binary Films. Issue 1670 (1st August 2014)

• Record Type: Journal Article
• Authors: Barrios-Salgado, Enue; Campos, José; Nair, M. T. S.; Nair, P. K.
• Is Part Of: MRS proceedings. Issue 1670:(2014)
• Publication Date: 2014-08-01
• Subjects: electronic material, -- film, -- photovoltaic; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.777
• Languages: English
• ISSNs: 0272-9172

Abstract

Abstract: Chemically deposited thin film stack of SnSe-ZnSe-Cu2-x Se was heated in nitrogen with Se vapor at 350-400 o C to produce Cu2 ZnSnSe4 (CZTSe) thin films. For this, a thin film of SnSe with 180 nm thickness was deposited at 26 ° C from a chemical bath containing tin(II) chloride, triethanolamine, sodium hydroxide, sodium selenosulfate, and a small quantity of polyvinylpyrrolidone. Thin films of ZnSe and Cu2-x Se were subsequently deposited on this SnSe film, also from chemical bath. The CZTSe thin film produced this way shows X-ray diffraction pattern matching that of Cu2 ZnSnSe4 (kesterite/stannite) and have a Zn-rich composition. The film has an optical band gap of 0.9-1.0 eV and p-type electrical conductivity, 0.2-0.06 Ω -1 cm -1 .