Effect of a MoO3 buffer layer between C8-BTBT and Co(100) single-crystal film. Issue 113 (28th November 2016)

• Record Type: Journal Article
• Authors: Zhu, Menglong; Lyu, Lu; Niu, Dongmei; Zhang, Hong; Wang, Shitan; Gao, Yongli
• Is Part Of: RSC advances. Volume 6:Issue 113(2016)
• Page Start: 112403
• Page End: 112408
• Publication Date: 2016-11-28
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra23981a
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : The effect of a MoO3 buffer layer inserted between 2, 7-dioctyl[1]benzothieno[3, 2- b ]benzothiophene (C8-BTBT) and Co single-crystal film has been investigated using X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). Abstract : The effect of a MoO3 buffer layer inserted between 2, 7-dioctyl[1]benzothieno[3, 2- b ]benzothiophene (C8-BTBT) and Co single-crystal film has been investigated using X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). The high work function of the MoO3 buffer layer bends the electronic structure of C8-BTBT upward toward the interface, and thus reduces the hole injection barrier to 0.97 eV, facilitating the hole injection from the Co electrode to C8-BTBT via electron extraction from the highest occupied molecular orbital of C8-BTBT through the low-lying conduction band of MoO3 . Desulfurization reaction of C8-BTBT by cobalt is also eliminated by the MoO3 buffer layer. These effects illustrate the significance of a MoO3 buffer layer on interface energy level alignment and provide important insight into device design, fabrication and possible direction to improve the performance of C8-BTBT/Co-based organic spin valves.