Strain‐Controlled Responsiveness of Slave Half‐Doped Manganite La0.5Sr0.5MnO3 Layers Inserted in BaTiO3 Ferroelectric Tunnel Junctions. (22nd November 2016)

• Record Type: Journal Article
• Authors: Radaelli, Greta; Gutiérrez, Diego; Qian, Mengdi; Fina, Ignasi; Sánchez, Florencio; Baldrati, Lorenzo; Heidler, Jakoba; Piamonteze, Cinthia; Bertacco, Riccardo; Fontcuberta, Josep
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 12(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-11-22
• Subjects: ferroelectric tunnel junctions -- half‐doped manganites -- metal–insulator transitions -- strain -- tunnel electroresistance; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201600368
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : In ferroelectric BaTiO3 tunnel junctions, integrating tensile strained slave La0.5 Sr0.5 MnO3 (HD) layers, polarization reversal promotes an orbital‐reordering and a concomitant metal–insulator transition in the HD layer that largely enhances the electroresistance of the junctions. Radically different results are obtained under compressive strain.