Dielectric and ferroelectric behavior of an incipient ferroelectric Sr(1−3x/2)CexTiO3 novel solid solution. Issue 94 (26th September 2016)

• Record Type: Journal Article
• Authors: Ullah, Burhan; Lei, Wen; Wang, Xiao-Hong; Fan, Gui-Fen; Wang, Xiao-Chuan; Lu, Wen-Zhong
• Is Part Of: RSC advances. Volume 6:Issue 94(2016)
• Page Start: 91679
• Page End: 91688
• Publication Date: 2016-09-26
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra18717j
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Phase formation, chemical structure, microwave (MW) dielectric properties, and relaxor-to-ferroelectric phase transition behavior of a novel Sr(1−3 x /2) Ce x TiO3 solid solution ceramic sintered in nitrogen have been investigated. Abstract : Phase formation, chemical structure, microwave (MW) dielectric properties, and relaxor-to-ferroelectric phase transition behavior of a novel solid solution with Ce-doped, A-site SrTiO3 (Sr(1−3 x /2) Ce x TiO3 ) ceramic sintered in nitrogen have been investigated. X-ray diffraction (XRD) showed that the samples with x ≤ 0.3 appeared cubic but exhibited splitting and superstructure reflections consistent with tetragonal (0.4 ≤ x ≤ 0.45) and orthorhombic (0.5 ≤ x ≤ 0.6) structures. Chemical structure analysis revealed that the addition of small amounts of ceria ( x ≤ 0.3) promoted Ti 3+ cation and oxygen vacancy . By contrast, the addition of large amounts of ceria ( x ≥ 0.4) inhibited this process. Sr(1−3 x /2) Ce x TiO3 ceramics displayed frequency-dependent relaxor dielectric anomalies and frequency-independent normal ferroelectric behaviors. The relaxor/dielectric properties were strongly dependent on structure-chemical factors. The value of ε r decreased several times when Sr was subsequently substituted with Ce, and induced a relaxor-to-ferroelectric phase transition. A good combination of the following microwave dielectric properties was obtained for the Sr0.1 Ce0.6 TiO3 orthorhombic solid solution at an optimum temperature of 1300 °C for 3 h: ε r = 50, Q × f = 11 311 GHz, and τ f = +3 ppm per °C.