Zinc oxide as a hole blocking layer for perovskite solar cells deposited in atmospheric conditions. Issue 72 (15th July 2016)

• Record Type: Journal Article
• Authors: Hadouchi, Warda; Rousset, Jean; Tondelier, Denis; Geffroy, Bernard; Bonnassieux, Yvan
• Is Part Of: RSC advances. Volume 6:Issue 72(2016)
• Page Start: 67715
• Page End: 67723
• Publication Date: 2016-07-15
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra16865e
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : A sputtered ZnO thin film was used as electron extraction layer, in a planar perovskite based solar cell. As a result a maximum power conversion efficiency (PCE) of 14.2%, measured at reverse scan, has been demonstrated. Abstract : Zinc oxide (ZnO) is a widely used transparent conductive oxide owing to its tunable optoelectronic properties, particularly in the field of solar energy conversion. In this study a thin layer of this compound has been employed as a hole-blocking layer in a planar perovskite based solar cell in substitution for the classical titanium dioxide (TiO2 ) bilayer. The introduction of intrinsic ZnO between the perovskite layer and the degenerate n-type doped contact leads to a large reduction of the recombination at this interface. Optimization of the ZnO layer properties together with that of the perovskite deposition parameters leads to the measurement of a power conversion efficiency of 14.2% measured at a reverse scan on a 0.175 cm 2 cell. Moreover, the ageing cell performance has been investigated over more than two months for both encapsulated and non-encapsulated devices. When a decrease of the fill factor with time, possibly related to the degradation of the cell contact, is observed, the short circuit current (>18 mA cm −2 ) and the open circuit (>1 V) potential remain remarkably constant.