Effect of doping indium into a Bi2Te3 matrix on the microstructure and thermoelectric transport properties. Issue 65 (23rd June 2016)

• Record Type: Journal Article
• Authors: Guo, Xin; Qin, Jieming; Lv, Xiaoling; Deng, Le; Jia, Xiaopeng; Ma, Hongan; Jia, Hongsheng
• Is Part Of: RSC advances. Volume 6:Issue 65(2016)
• Page Start: 60736
• Page End: 60740
• Publication Date: 2016-06-23
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra09767g
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Doping In into a Bi2 Te3 matrix can significantly transform textural features and decrease the lattice thermal conductivity. Abstract : Indium (In) as an unconventional doping element for Bi2 Te3 is applied in this work to investigate the effect of In doping on the microstructure and thermoelectric transport properties of Bi2 Te3 -based alloys prepared via a unique high-pressure method (high pressure and high temperature, HPHT). The synthesis time of the sample is acutely shortened compared with conventional preparation methods. Doping In into a Bi2 Te3 matrix can induce multiple textures and microstructures, effectively scattering different frequency phonons. Additionally, the electrical transport properties are also significantly modulated due to the role of In atoms as electron donors. As a result, the lattice thermal conductivity and electrical resistivity are dramatically reduced, in particular a decrease of 64–54% in 305–585 K of the lattice thermal conductivity of the samples with In content from 1 to 2 at%. An acceptable ZT value of 0.65 at 385 K is achieved from the as-prepared Bi1.9 In0.1 Te3 bulk materials with In as a dopant in the Bi2 Te3 matrix.