Electron field emitters made of 3-D CuO nanowires on flexible silicon substrate fabricated by heating Cu rods with through silicon via process. Issue 53 (13th May 2016)

• Record Type: Journal Article
• Authors: Juan, Y. M.; Chang, S. J.; Hsueh, H. T.; Wang, S. H.; Cheng, T. C.; Huang, S. W.; Hsueh, T. J.; Yeh, Y. M.; Hsu, C. L.
• Is Part Of: RSC advances. Volume 6:Issue 53(2016)
• Page Start: 47292
• Page End: 47297
• Publication Date: 2016-05-13
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra07781a
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Cu rods with a diameter of 10 μm on a flexible silicon substrate were fabricated using the through silicon via (TSV) process and chemical mechanical polishing (CMP). Abstract : Cu rods with a diameter of 10 μm on a flexible silicon substrate were fabricated using the through silicon via (TSV) process and chemical mechanical polishing (CMP). The turn-on field and field enhancement factor ( β ) of the TSV Cu rods were 28.6 V μm −1 and 1721, respectively. Three-dimensional (3-D) CuO nanowires (NWs) were then grown vertically and laterally on the top and sidewall of the Cu rods via heat treatment in air for various durations. The turn-on field was reduced sharply after CuO NW growth. Longer CuO NWs and higher NW density led to a lower turn-on field. The turn-on fields of samples treated for 0.5, 1, and 5 h were 5.4, 4.9, and 3.5 V μm −1, and the β values were 2546, 2734, and 4262, respectively. The 3-D CuO NWs are suitable for applications that require a flexible substrate.