Inorganic Double Helices in Semiconducting SnIP. Issue 44 (14th September 2016)

• Record Type: Journal Article
• Authors: Pfister, Daniela; Schäfer, Konrad; Ott, Claudia; Gerke, Birgit; Pöttgen, Rainer; Janka, Oliver; Baumgartner, Maximilian; Efimova, Anastasia; Hohmann, Andrea; Schmidt, Peer; Venkatachalam, Sabarinathan; van Wüllen, Leo; Schürmann, Ulrich; Kienle, Lorenz; Duppel, Viola; Parzinger, Eric; Miller, Bastian; Becker, Jonathan; Holleitner, Alexander; Weihrich, Richard; Nilges, Tom
• Is Part Of: Advanced materials. Volume 28:Issue 44(2016)
• Page Start: 9783
• Page End: 9791
• Publication Date: 2016-09-14
• Subjects: double helices -- nanorods -- photoluminescence -- quantum‐confinement -- semiconductor; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201603135
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : SnIP is the first atomic‐scale double helical semiconductor featuring a 1.86 eV bandgap, high structural and mechanical flexibility, and reasonable thermal stability up to 600 K. It is accessible on a gram scale and consists of a racemic mixture of right‐ and left‐handed double helices composed by [SnI] and [P] helices. SnIP nanorods <20 nm in diameter can be accessed mechanically and chemically within minutes.