Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks. Issue 46 (11th October 2016)

• Record Type: Journal Article
• Authors: Tanabe, Yoichi; Ito, Yoshikazu; Sugawara, Katsuaki; Hojo, Daisuke; Koshino, Mikito; Fujita, Takeshi; Aida, Tsutomu; Xu, Xiandong; Huynh, Khuong Kim; Shimotani, Hidekazu; Adschiri, Tadafumi; Takahashi, Takashi; Tanigaki, Katsumi; Aoki, Hideo; Chen, Mingwei
• Is Part Of: Advanced materials. Volume 28:Issue 46(2016)
• Page Start: 10304
• Page End: 10310
• Publication Date: 2016-10-11
• Subjects: 3D nanoporous materials -- CVD growth -- electric transport -- field effect transistors -- graphene; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201601067
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Nanoporous graphene‐ based electric‐double‐layer transistors (EDLTs) are successfully fabricated. Transport measurements of the EDLTs demonstrate that the ambipolar electronic states of massless Dirac fermions with a high carrier mobility are well preserved in 3D nanoporous graphene along with anomalous nonlinear Hall resistance and exceptional transistor on/off ratio. This study may open a new avenue for device applications of graphene.