Achieving high-performance planar perovskite solar cells with co-sputtered Co-doping NiOx hole transport layers by efficient extraction and enhanced mobility. Issue 46 (9th November 2016)

• Record Type: Journal Article
• Authors: Huang, A. B.; Zhu, J. T.; Zheng, J. Y.; Yu, Y.; Liu, Y.; Yang, S. W.; Bao, S. H.; Lei, L.; Jin, P.
• Is Part Of: Journal of materials chemistry. Volume 4:Issue 46(2016)
• Page Start: 10839
• Page End: 10846
• Publication Date: 2016-11-09
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c6tc03624d
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Magnetron sputtered Co-doped NiO HTLs show greatly improved hole mobility and long-term stability. Abstract : Perovskite solar cells are some of the most promising photovoltaic devices and they have experienced extraordinary progress in efficiency and fabricating technologies. Herein, we explore the effect of Co-doped NiO x hole transport layers on the electronic structure and photovoltaic properties of PSCs, which were deposited onto FTO substrates via DC magnetron sputtering at room temperature. Appropriate Co-doping can slightly regulate the optical band gap and the Fermi level position, leading to an increased potential cell performance. By virtue of continuously adjusting the power loaded onto the Co target, we can obtain the optimal atomic ratio of the Co:NiO x hole transport layer, and the PSC based on Co:NiO x exhibited a 25% higher efficiency than its undoped counterparts (from 9.46% to 12.61%). Therefore, these results demonstrate that Co is an appropriate dopant and the PSCs based on Co:NiO x layers have a good performance.