High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric. Issue 40 (20th September 2016)

• Record Type: Journal Article
• Authors: Shan, Fukai; Liu, Ao; Zhu, Huihui; Kong, Weijin; Liu, Jingquan; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Liu, Guoxia
• Is Part Of: Journal of materials chemistry. Volume 4:Issue 40(2016)
• Page Start: 9438
• Page End: 9444
• Publication Date: 2016-09-20
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c6tc02137a
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : High-performance p-type NiO x thin-film transistors are fabricated via a low-cost solution process and exhibit a high mobility of around 15 cm 2 V −1 s −1 . Abstract : Although there are a few research studies on solution-processed p-channel oxide thin-film transistors (TFTs), the strict fabrication conditions and the poor electrical properties have limited their applications in low-power complementary metal oxide semiconductor (CMOS) electronics. Here, the application of the polyol reduction method for processing p-type Cu x O and NiO x channel layers and their implementation in TFT devices are reported. The optimized Cu x O and NiO x TFTs were achieved at low annealing temperatures (∼300 °C) and exhibited decent electrical properties. Encouraged by the inspiring results obtained on SiO2 /Si substrates, the TFT performance was further optimized by device engineering, employing high- k AlO x as the gate dielectric. The fully solution-processed NiO x /AlO x TFT could be operated at a low voltage of 3.5 V and exhibits a high hole mobility of around 25 cm 2 V −1 s −1 . Our work demonstrates the ability to grow high-quality p-type oxide films and devices via the polyol reduction method over large area substrates while at the same time it provides guidelines for further p-type oxide material and device improvements.