Enhanced X-ray excited luminescence of Ga- and In-doped ZnO nanorods by hydrogen annealing. (February 2017)

• Record Type: Journal Article
• Authors: Li, Qianli; Liu, Xiaolin; Gu, Mu; Huang, Shiming; Zhang, Juannan; Liu, Bo; Ni, Chen; Hu, Yahua; Zhao, Shuning; Wu, Qiang
• Is Part Of: Materials research bulletin. Volume 86(2017)
• Page Start: 173
• Page End: 177
• Publication Date: 2017-02
• Subjects: ZnO nanorods -- Ion doping -- Hydrogen annealing -- Photoluminescence -- X-ray excited luminescence; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2016.10.027
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Enhanced X-ray excited luminescence of (a) Ga- and (b) In-doped ZnO nanorods annealed in H2 /Ar atmosphere. Highlights: Ga- and In-doped ZnO nanorods were prepared by hydrothermal method and annealed in diluted hydrogen atmosphere. Dramatically enhanced ultraviolet and suppressed visible emissions are demonstrated in these samples under ultraviolet or X-ray excitation. An intense superfast ultraviolet luminescence is achieved in vertically aligned ZnO:Ga nanorod arrays. Abstract: The Ga- and In-doped ZnO nanorods were prepared by hydrothermal method, and the effect of the hydrogen annealing on their morphology, structure and luminescence properties was investigated in detail. The results indicated that the annealing treatment resulted in the improvement of the surface roughness and the crystallization of the nanorods. Furthermore, the hydrogen-annealed nanorods exhibited a significant enhancement of the ultraviolet emission and simultaneous suppression of the visible emission under ultraviolet and X-ray excitation, as well as a sub-nanosecond fluorescence decay time. It means that these nanorods are expected to be promising candidates for applications in superfast and high-spatial-resolution X-ray imaging detectors.