Fast High‐Responsivity Few‐Layer MoTe2 Photodetectors. Issue 11 (16th August 2016)

• Record Type: Journal Article
• Authors: Octon, Tobias J.; Nagareddy, V. Karthik; Russo, Saverio; Craciun, Monica F.; Wright, C. David
• Is Part Of: Advanced optical materials. Volume 4:Issue 11(2016:Nov.)
• Page Start: 1750
• Page End: 1754
• Publication Date: 2016-08-16
• Subjects: 2D materials -- fast photoresponse -- field‐effect transistors -- molybdenum ditelluride -- photodetection; Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.201600290
• Languages: English
• ISSNs: 2195-1071

Abstract

Abstract : The transition metal dichalcogenide MoTe2 is fabricated into few‐layer field‐effect transistors that show hole conduction with a mobility of 2.04 V cm −2 s −1 . Four‐layer MoTe2 devices have a high photoresponsivity of 6 A W −1 and a response time, at around 160 μs, over 100 times faster than previously reported, making them a strong candidate for high speed and high sensitivity photodetection.