Cite
HARVARD Citation
Grant, N. et al. (n.d.). Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon. Physica status solidi. 213 (11), pp. 2844-2849. [Online].
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Grant, N. et al. (n.d.). Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon. Physica status solidi. 213 (11), pp. 2844-2849. [Online].