Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity. Issue 41 (26th August 2016)

• Record Type: Journal Article
• Authors: Lee, Dain; Hwang, Euyheon; Lee, Youngbin; Choi, Yongsuk; Kim, Jong Su; Lee, Seungwoo; Cho, Jeong Ho
• Is Part Of: Advanced materials. Volume 28:Issue 41(2016)
• Page Start: 9196
• Page End: 9202
• Publication Date: 2016-08-26
• Subjects: memory devices, floating gates -- MoS2 -- multilevel programs -- nonvolatile photoelectronic memory; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201603571
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A novel multibit MoS2 photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large‐area MoS2 flakes. The MoS2 photoelectronic memory exhibits excellent memory characteristics, including a large programming/erasing current ratio that exceeds 10 7, multilevel data storage of 3 bits (corresponding to eight levels), performance stability over 200 cycles, and stable data retention over 10 4 s.