Laser Desorption Ionization Time‐of‐Flight Mass Spectrometry of Glasses and Amorphous Films from Ge–As–Se System. Issue 11 (30th June 2016)

• Record Type: Journal Article
• Authors: Šútorová, Katarína; Prokeš, Lubomír; Nazabal, Virginie; Baudet, Emeline; Havel, Josef; Němec, Petr
• Editors: Lucas, P.
• Is Part Of: Journal of the American Ceramic Society. Volume 99:Issue 11(2016)
• Page Start: 3594
• Page End: 3599
• Publication Date: 2016-06-30
• Subjects: chalcogenides -- glass -- thin films -- structure -- selenium/selenium compounds; Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.14366
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract : Laser Desorption Ionization Time‐of‐Flight Mass Spectrometry was exploited for the characterization of Ge–As–Se chalcogenide glasses and corresponding thin films fabricated using pulsed laser deposition. Main achievement of the paper is the determination of laser generated clusters' stoichiometry. The clusters observed were As b + ( b = 1–3), Se2 −, binary As b Se + ( b = 1–3), As b Se c − ( b = 1–3, c = 1–4), Ge2 Se c − ( c = 2–3), As3 Se2 +, Ge2 As b − ( b = 2–3), Ge3 As b − ( b = 1–2), Ge3 Se4 −, As5 Se c − ( c = 4–5), GeAsSe4 −, Ge a AsSe5 − ( a = 1–4), GeAs2 Se3 −, GeAs3 Se2 −, Ge2 As2 Se2 −, Ge2 AsSe c − ( c = 6–7), and GeAs3 Se c − ( c = 5–6) (in positive as well as in negative ion mode). The stoichiometries of identified species are compared with the structural units of the glasses/thin films revealed via Raman scattering spectra analysis. Some species are suggested to be fragments of bulk glass as well as thin films. Described method is useful also for the evaluation of the contamination of chalcogenide glasses or their thin films.