Flexible Electronics: Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide (Small 41/2016). Issue 41 (2nd November 2016)

• Record Type: Journal Article
• Authors: Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il‐Kwon; Kim, Hyungjun; Ahn, Jong‐Hyun
• Is Part Of: Small. Volume 12:Issue 41(2016)
• Page Start: 5650
• Page End: 5650
• Publication Date: 2016-11-02
• Subjects: CVD MoS2 -- flexible CMOS inverters -- flexible electronics -- single crystal Si NM; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201670211
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : On page 5720, J.‐H. Ahn and co‐workers demonstrate large area, flexible hybrid complementary metal–oxide–semiconductor (CMOS) logic inverter based on the combination of ultrathin p‐channel c‐Si nanomembranes and n‐channel chemical vapor deposition MoS2 transistors. Such integration of high performance Si technology with transition‐metal dichalcogenides offers reliable electrical and mechanical properties and promises a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics.