Conductive Graphitic Channel in Graphene Oxide‐Based Memristive Devices. (31st August 2016)

• Record Type: Journal Article
• Authors: Kim, Sung Kyu; Kim, Jong Yoon; Jang, Byung Chul; Cho, Mi Sun; Choi, Sung‐Yool; Lee, Jeong Yong; Jeong, Hu Young
• Is Part Of: Advanced functional materials. Volume 26:Number 41(2016)
• Page Start: 7406
• Page End: 7414
• Publication Date: 2016-08-31
• Subjects: Al conductive filaments -- graphene oxide -- graphitic channels -- resistive switching memory; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201602748
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Electrically insulating graphene oxide with various oxygen‐functional groups is a novel material as an active layer in resistive switching memories via reduction process. Although many research groups have reported on graphene oxide‐based resistive switching memories, revealing the origin of conducting path in a graphene oxide active layer remains a critical challenge. Here nanoscale conductive graphitic channels within graphene oxide films are reported using a low‐voltage spherical‐aberration‐corrected transmission electron microscopy. Simultaneously, these channels with reduced graphene oxide nanosheets induced by the detachment of oxygen groups are verified by Raman intensity ratio map and conductive atomic force microscopy. It is also clearly revealed that Al metallic protrusions, which are generated in the bottom interface layer, assist the local formation of conductive graphitic channels directly onto graphene oxide films by generating a local strong electric field. This work provides essential information for future carbon‐based nanoelectronic devices. Abstract : A conductive graphitic channel in graphene oxide layer, induced by Al metallic protrusions, is characterized. The diffusion of Al metal from the electrode to the bottom interface layer creates a strong local electric field to form a graphitic channel in the graphene oxide layer. The highly reduced graphitic channel is the key element to unveil the switching mechanism within graphene oxide‐based memory.