Effect of Zn substitution on the sintering temperature and microwave dielectric properties of MgSiO3-based ceramics. Issue 1 (January 2017)

• Record Type: Journal Article
• Authors: Ullah, Atta; Liu, Hanxing; Hao, Hua; Iqbal, Javed; Yao, Zhonghua; Cao, Minghe; Xu, Qi
• Is Part Of: Ceramics international. Volume 43:Issue 1(2017)Part A
• Page Start: 484
• Page End: 490
• Publication Date: 2017-01
• Subjects: Microwaves -- Dielectric materials/properties -- Grain size -- Morphology; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2016.09.183
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Mg1−x Znx SiO3 (x=0–0.3) ceramics were successfully synthesized by conventional solid-state methods and characterized by scanning electron microscopy, dispersive X-ray spectroscopy, and X-ray diffraction. The microstructures and microwave dielectric properties of Mg1−x Znx SiO3 ceramics were systematically investigated. The lattice parameters of the samples with different Zn 2+ contents were analyzed. When the Zn 2+ content was increased from 0 to 0.15, the Q u f o of the sample increased from 103, 453 GHz to a maximum 138, 481 GHz. This also resulted in a significant lowering in the sintering temperature (90 °C). Monoclinic structured Mg0.85 Zn0.15 SiO3 was detected without any secondary phase. In this study, a new combination of microwave dielectric properties (εr ∼8.05, Q u f o ∼138, 481 GHz, τf ∼−14 ppm/°C) was achieved for Mg0.85 Zn0.15 SiO3 sample sintered at 1360 °C for 9 h. The prepared material with remarkable useful dielectric properties can be used for millimeter-wave applications.