Computer simulation of the sheath and the adjacent plasma in the presence of a plasma source. (January 2017)

• Record Type: Journal Article
• Authors: Shustin, E.G.; Tarakanov, V.P.; Ronald, K.
• Is Part Of: Vacuum. Volume 135(2017)
• Page Start: 1
• Page End: 6
• Publication Date: 2017-01
• Subjects: Low temperature plasma -- Computer simulation -- Plasma sheath -- Energy distribution; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2016.10.002
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: A model is constructed allowing computer simulations of the near-wall area of a planar plasma sheet in conditions where the steady state of the plasma is supported by the production of charged particles in a region removed from the wall. Calculations have revealed variation in the energy distribution of the electrons in both time and spatially over the sheet width (cooling the electronic component) due to absorption of fast electrons at the walls bounding the plasma volume. It is shown that the plasma density profile across the sheet width has an abrupt decrease at the boundary of the region of plasma regulation. Thus the standard concepts of the potential and plasma density distributions in the sheath and presheath based on the assumption of a stable energy distribution for the electrons in the presheath yields inaccurate results for the plasma sheet where the ionization source is remote from the wall. Highlights: We performed modeling of the structure of a plasma layer near a wall in the presence of a plasma source. Specially developed model, imitating beam excited plasma, was applied for PiC simulation. Interaction of plasma with a wall causes cooling of electrons and corresponding decrease of floating potential.