Abnormal bipolar resistive switching behavior in carbon-iron composite films with different thicknesses. (January 2017)

• Record Type: Journal Article
• Authors: Zhou, J.W.; Li, T.R.; Zhang, D.; Ren, B.; Zhang, S.W.; Huang, J.; Zhang, J.M.; Wang, L.; Jiang, Y.C.; Gao, J.; Wang, L.J.
• Is Part Of: Vacuum. Volume 135(2017)
• Page Start: 115
• Page End: 120
• Publication Date: 2017-01
• Subjects: Resistive switching -- Amorphous carbon -- Carbon-iron composite -- Thickness; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2016.10.034
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: Carbon-iron composite films with different thicknesses (50, 100 and 150 nm) were deposited by DC magnetron sputtering method using a composite target (Fe: 4 at%, C: 96 at%). The resistive switching behaviors of Pt/Al/ a -C:Fe/Au/Ti structures with different a -C:Fe film thicknesses are investigated. Abnormal bipolar resistive switching characteristics were observed in all Pt/Al/ a -C:Fe/Au/Ti memory cells. Considering the endurance and retention properties, the RRAM cell with 100 nm thick a -C:Fe film as the dielectric layer showed the best performance with on/off-resistance ratio ∼10, and retention time >10 4 s. Based on the results of the X-ray photoelectron spectroscopy depth profile, the resistive switching behavior is attributed to mutative Al 3+ fraction at the Al/ a -C:Fe interface and the migration of Au ions between two electrodes. Highlights: Abnormal bipolar resistive switching characteristics were observed in all Pt/Al/ a -C:Fe/Au/Ti memory cells. The resistive switching behavior is attributed to mutative Al 3+ fraction at the Al/ a -C:Fe interface. The influences of the variation in Schottky barrier height near the Al interface were also discussed.