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HARVARD Citation
Miyazaki, T. et al. (2016). Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers. Superlattices and microstructures. pp. 197-201. [Online].
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Miyazaki, T. et al. (2016). Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers. Superlattices and microstructures. pp. 197-201. [Online].