Cite
HARVARD Citation
Knetzger, M. et al. (2016). Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics. Microelectronics and reliability. pp. 16-21. [Online].
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Knetzger, M. et al. (2016). Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics. Microelectronics and reliability. pp. 16-21. [Online].