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HARVARD Citation
Tang, Z. et al. (n.d.). Performance improvement of charge‐trap memory by using a stacked Zr0.46Si0.54O2/Al2O3 charge‐trapping layer. Physica status solidi. 213 (11), pp. 3033-3038. [Online].
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Tang, Z. et al. (n.d.). Performance improvement of charge‐trap memory by using a stacked Zr0.46Si0.54O2/Al2O3 charge‐trapping layer. Physica status solidi. 213 (11), pp. 3033-3038. [Online].