Highly Conducting In2O3 Nanowire Network with Passivating ZrO2 Thin Film for Solution‐Processed Field Effect Transistors. (26th September 2016)

• Record Type: Journal Article
• Authors: Park, Hyungjin; Yoon, Ki Ro; Kim, Sung Kyu; Kim, Il‐Doo; Jin, Jungho; Kim, Yun Hyeok; Bae, Byeong‐Soo
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 11(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-09-26
• Subjects: conduction mechanism -- electrospinning -- field effect transistors -- interfacial dipole -- metal oxide nanowires; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201600218
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : A hybrid In2 O3 nanowire/ZrO2 thin film field effect transistor is demonstrated and the role of insulating ZrO2 thin film is investigated. The ZrO2 film effectively passivates oxygen vacancies at the surface of the conducting In2 O3 nanowire network and produces interfacial dipoles, leading to a lower energy barrier for current conduction.