Indirect Bandgap Puddles in Monolayer MoS2 by Substrate‐Induced Local Strain. Issue 42 (7th September 2016)

• Record Type: Journal Article
• Authors: Shin, Bong Gyu; Han, Gang Hee; Yun, Seok Joon; Oh, Hye Min; Bae, Jung Jun; Song, Young Jae; Park, Chong‐Yun; Lee, Young Hee
• Is Part Of: Advanced materials. Volume 28:Issue 42(2016)
• Page Start: 9378
• Page End: 9384
• Publication Date: 2016-09-07
• Subjects: bandgap -- direct‐to‐indirect bandgap transition -- layered materials -- MoS2 -- strain; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201602626
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : An unusually large bandgap modulation of 1.23–2.65 eV in monolayer MoS2 on a SiO2 /Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct‐to‐indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confirmed further by the degraded photoluminescence compared to that from suspended MoS2 .