Colloidal Synthesis of Uniform‐Sized Molybdenum Disulfide Nanosheets for Wafer‐Scale Flexible Nonvolatile Memory. Issue 42 (29th August 2016)

• Record Type: Journal Article
• Authors: Son, Donghee; Chae, Sue In; Kim, Myungbin; Choi, Moon Kee; Yang, Jiwoong; Park, Kunsu; Kale, Vinayak S.; Koo, Ja Hoon; Choi, Changsoon; Lee, Minbaek; Kim, Ji Hoon; Hyeon, Taeghwan; Kim, Dae‐Hyeong
• Is Part Of: Advanced materials. Volume 28:Issue 42(2016)
• Page Start: 9326
• Page End: 9332
• Publication Date: 2016-08-29
• Subjects: colloidal synthesis -- flexible electronics -- MoS2 nanosheets -- resistive random access memory; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201602391
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Large‐scale colloidal synthesis and integration of uniform‐sized molybdenum disulfide (MoS2 ) nanosheets for a flexible resistive random access memory (RRAM) array are presented. RRAM using MoS2 nanosheets shows a ≈10 000 times higher on/off ratio than that based on exfoliated MoS2 . The good uniformity of the MoS2 nanosheets allows wafer‐scale system integration of the RRAM array with pressure sensors and quantum‐dot light‐emitting diodes.