Cite
HARVARD Citation
Shinde, N. et al. (2017). Surface profile of minority carrier lifetime in 65 and 100 MeV fluorine ion irradiated n-Si (111). Radiation physics and chemistry. pp. 118-122. [Online].
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Shinde, N. et al. (2017). Surface profile of minority carrier lifetime in 65 and 100 MeV fluorine ion irradiated n-Si (111). Radiation physics and chemistry. pp. 118-122. [Online].