Atomic‐Monolayer MoS2 Band‐to‐Band Tunneling Field‐Effect Transistor. Issue 41 (4th September 2016)

• Record Type: Journal Article
• Authors: Lan, Yann‐Wen; Torres, Carlos M.; Tsai, Shin‐Hung; Zhu, Xiaodan; Shi, Yumeng; Li, Ming‐Yang; Li, Lain‐Jong; Yeh, Wen‐Kuan; Wang, Kang L.
• Is Part Of: Small. Volume 12:Issue 41(2016)
• Page Start: 5676
• Page End: 5683
• Publication Date: 2016-09-04
• Subjects: 2D materials -- band‐to‐band tunneling -- MoS2 -- transition metal dichalcogenides -- tunneling field effect transistors; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201601310
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : The experimental observation of band‐to‐band tunneling in novel tunneling field‐effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate‐coupling efficiency enabled by two‐dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band‐to‐band tunneling current and an ambipolar transport.