Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping. Issue 1 (2nd January 2017)

• Record Type: Journal Article
• Authors: Feng, Ruixing; Kremer, Felipe; Sprouster, David J.; Mirzaei, Sahar; Decoster, Stefan; Glover, Chris J.; Medling, Scott A.; Hansen, John Lundsgaard; Nylandsted-Larsen, Arne; Russo, Salvy P.; Ridgway, Mark C.
• Is Part Of: Materials research letters. Volume 5:Issue 1(2017)
• Page Start: 29
• Page End: 34
• Publication Date: 2017-01-02
• Subjects: SiGe -- C + In co-doping -- X-ray absorption fine structure -- Hall Effect; Materials science -- Research -- Periodicals; Biomedical materials -- Research -- Periodicals; Composite materials -- Research -- Periodicals; Biomedical materials -- Research; Composite materials -- Research; Materials science -- Research; Periodicals; 620.1105
• DOI: 10.1080/21663831.2016.1169229
• Languages: English
• ISSNs: 2166-3831

Abstract

ABSTRACT: In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35 Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si0.35 Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples. GRAPHICAL ABSTRACT: IMPACT STATEMENT This work is the first to demonstrate that co-doping Carbon (C) with Indium (In) in SiGe is an effective strategy for obtaining high electrically active dopant fractions, which benefits advanced complementary metal-oxide semiconductor (CMOS) devices performance.