Epitaxial integration of TiO2 with Si(100) through a novel approach of oxidation of TiN/Si(100) epitaxial heterostructure. Issue 37 (20th June 2016)

• Record Type: Journal Article
• Authors: Moatti, A.; Bayati, R.; Singamaneni, S.; Narayan, J.
• Is Part Of: MRS advances. Volume 1:Issue 37(2016)
• Page Start: 2629
• Page End: 2634
• Publication Date: 2016-06-20
• Subjects: oxidation, -- magnetic properties, -- epitaxy; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2016.463
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: In this study, we provide a novel approach to the epitaxial integration of TiO2 with Si(100) and investigate the defect mediated ferromagnetism in TiO2 structure. Epitaxial TiO2 thin films were grown on a TiN/Si(100) epitaxial heterostructure through oxidation of TiN where a single crystalline rutile-TiO2 (r-TiO2 ) with a [110] out-of-plane orientation was obtained. The epitaxial relationship is determined to be TiO2 (1 $\bar 1$ 0)||TiN(100) and TiO2 (110)||TiN(110). We rationalized this epitaxy using the domain matching epitaxy paradigm. First TiN is grown epitaxially on Si(100). Subsequently, TiN/Si(100) samples are oxidized to create r-TiO2 /TiN/Si(100) epitaxial heterostructures. The details of the mechanism behind the oxidation of single crystalline TiN to TiO2 was investigated using atomic scale high resolution electron microscopy techniques. Defects introduced to the heterostructure during oxidation caused ferromagnetism in TiO2 thin film which is reversible and can be tuned by controlling oxygen partial pressure. The source of magnetization is correlated with the presence of oxygen vacancy leading to introduction of two localized states; hybrid and polaron among neighboring Ti atoms, and titanium vacancy providing four holes to form molecular oxygen. We present structure property correlations and its impact on the next generation solid state devices.