Cite
HARVARD Citation
Das, S. et al. (2014). 1/f Noise in MoS2 Field Effect Transistors with Various Layer Thicknesses. MRS proceedings. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Das, S. et al. (2014). 1/f Noise in MoS2 Field Effect Transistors with Various Layer Thicknesses. MRS proceedings. p. . [Online].