Cite
HARVARD Citation
Chen, J. et al. (2016). The Origin of Improved Electrical Double‐Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors. Angewandte Chemie. pp. 14026-14031. [Online].
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Chen, J. et al. (2016). The Origin of Improved Electrical Double‐Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors. Angewandte Chemie. pp. 14026-14031. [Online].