Role of Alumina Buffer Layer on the Dielectric and Piezoelectric Properties of PZT System Thick Films. Issue 2 (29th October 2012)

• Record Type: Journal Article
• Authors: Shin, Tae Hee; Ha, Jong‐Yoon; Song, Hyun Cheol; Yoon, Seok‐Jin; Hwang, Seong‐Ju; Nahm, Sahn; Park, Hyung‐Ho; Choi, Ji‐Won
• Editors: Troiler‐McKinstry, S.
• Is Part Of: Journal of the American Ceramic Society. Volume 96:Issue 2(2013)
• Page Start: 491
• Page End: 495
• Publication Date: 2012-10-29
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.12052
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract : Piezoelectric properties of screen‐printed thick films, 0.01Pb(Mg1/2 W1/2 )O3 –0.41Pb(Ni1/3 Nb2/3 )O3 –0.35PbTiO3 –0.23PbZrO3 + 0.1 wt% Y2 O3 + 1.5 wt% ZnO (PMW–PNN–PT–PZ+YZ) on alumina (Al2 O3 ) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMW–PNN–PT–PZ+YZ thick films, the Al2 O3 buffer layers on silicon (Si) substrates were used. The Al2 O3 buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb. The PMW–PNN–PT–PZ+YZ thick films with 900 nm thick Al2 O3 buffer layer showed piezoelectric properties such as P r = 32 μC/cm 2, E c = 25 kV/cm, and d 33 = 32 pC/N. These significant piezoelectric properties of our screen‐printed PMW–PNN–PT–PZ+YZ thick films by the Al2 O3 buffer layers can be applied to functional thick film in many micro‐electromechanical system (MEMS) applications such as micro actuators and sensors.