Ferroelectrics: Enhanced Ferroelectric Property of P(VDF‐TrFE‐CTFE) Film Using Room‐Temperature Crystallization for High‐Performance Ferroelectric Device Applications (Adv. Electron. Mater. 10/2016). (October 2016)

• Record Type: Journal Article
• Authors: Cho, Yuljae; Ahn, Docheon; Park, Jong Bae; Pak, Sangyeon; Lee, Sanghyo; Jun, Byoung Ok; Hong, John; Lee, Su Yong; Jang, Jae Eun; Hong, Jinpyo; Morris, Stephen M.; Sohn, Jung Inn; Cha, Seung Nam; Kim, Jong Min
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 10(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-10
• Subjects: ferroelectric phase -- ferroelectric polymers -- phase transition -- paraelectric phase -- P(VDF‐TrFE‐CTFE) -- solvent annealing; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201670054
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Enhanced ferroelectricity in P(VDF‐TrFE‐CTFE) film is attained by using a solvent annealing method that is a facile, reproducible, and room temperature approach to obtain an irreversible phase transition from the ferroelectric to paraelectric phase, as described by Y. Cho et al. in article number 1600225. With this ferroelectric P(VDF‐TrFE‐CTFE) film, applications in ferroelectric memory and mechanical energy harvesting are demonstrated with significantly enhanced device performance.