Enhanced Ferroelectric Property of P(VDF‐TrFE‐CTFE) Film Using Room‐Temperature Crystallization for High‐Performance Ferroelectric Device Applications. (11th August 2016)

• Record Type: Journal Article
• Authors: Cho, Yuljae; Ahn, Docheon; Park, Jong Bae; Pak, Sangyeon; Lee, Sanghyo; Jun, Byoung Ok; Hong, John; Lee, Su Yong; Jang, Jae Eun; Hong, Jinpyo; Morris, Stephen M.; Sohn, Jung Inn; Cha, Seung Nam; Kim, Jong Min
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 10(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-08-11
• Subjects: ferroelectric phase -- ferroelectric polymers -- phase transition -- paraelectric phase -- P(VDF‐TrFE‐CTFE) -- solvent annealing; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201600225
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : The ferroelectric β‐phase in a poly(vinylidenefluoride‐trifluoroethylene‐chlorotrifluoroethylene) film is successfully formed using a room temperature solvent‐annealing process and shows enhanced ferroelectricity compared to a thermally annealed film. Applications in electronics and energy are demonstrated with significantly enhanced device performances for a solvent annealing (SA) film employed devices compared to a thermal annealing film employed due to enhanced ferroelectricity of the SA film.