Highly Efficient Perovskite‐Quantum‐Dot Light‐Emitting Diodes by Surface Engineering. Issue 39 (16th August 2016)

• Record Type: Journal Article
• Authors: Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Murali, Banavoth; Sarmah, Smritakshi P.; Yuan, Mingjian; Sinatra, Lutfan; Alyami, Noktan M.; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N.; Mohammed, Omar F.; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H.; Bakr, Osman M.
• Is Part Of: Advanced materials. Volume 28:Issue 39(2016)
• Page Start: 8718
• Page End: 8725
• Publication Date: 2016-08-16
• Subjects: CsPbBr3 -- external quantum efficiency -- light‐emitting diodes -- perovskite -- quantum dots; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201600784
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A two‐step ligand‐exchange strategy is developed, in which the long‐carbon‐ chain ligands on all‐inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide‐ion‐pair ligands. Green and blue light‐emitting diodes made from the halide‐ion‐pair‐capped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.