Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors. Issue 39 (11th August 2016)

• Record Type: Journal Article
• Authors: Kaphle, Vikash; Liu, Shiyi; Al‐Shadeedi, Akram; Keum, Chang‐Min; Lüssem, Björn
• Is Part Of: Advanced materials. Volume 28:Issue 39(2016)
• Page Start: 8766
• Page End: 8770
• Publication Date: 2016-08-11
• Subjects: contact resistance -- organic electrochemical transistors -- transconductance; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201602125
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Injection at the source contact critically determines the behavior of depletion‐type organic electrochemical transistors (OETs). The contact resistance of OETs increases exponentially with the gate voltage and strongly influences the modulation of the drain current by the gate voltage over a wide voltage range. A modified standard model accounting contact resistance can explain the particular shape of the transconductance.