Electrothermal numerical modeling of multifilamentary conduction in Ta2O5−x /WO3−x bilayer oxides based RRAM. (8th August 2016)

• Record Type: Journal Article
• Authors: Asapu, Shiva; Maiti, Tanmoy
• Is Part Of: Ferroelectrics. Volume 500(2016)
• Page Start: 229
• Page End: 240
• Publication Date: 2016-08-08
• Subjects: Resistive switching -- RRAM -- multifilamentary; Ferroelectricity -- Periodicals; Ferroelectric crystals -- Periodicals; 537
• DOI: 10.1080/00150193.2016.1217706
• Languages: English
• ISSNs: 0015-0193

Abstract

Abstract: Resistive-switching random access memory (RRAM) has received a lot of attention for the application as next generation non-volatile memory (NVM). Among the various materials investigated over the years, transition-metal oxides have shown great potential due to their fast switching, compatibility with the CMOS process and easy scalability. Heterogeneous bilayered structures have been proposed recently in order to gain a substantial control over the uniformity in resistive switching of the RRAM devices. In the present work, a "2D multifilament rupture model" has been developed on heterogeneous bilayered dielectric stack of resistive-RAM (RRAM) or resistive switching (RS) cell. Finite element method (FEM) has been used to solve a set of 3 self-consistent partial differential equations (PDEs) using a numerical solver. With two entirely different oxides forming a stack, one of them ( ) acts as the reservoir of defects due to oxygen vacancies and the other layer ( ) serves as the active layer wherein a conduction path (conduction filament) is established.